Guerrilla GaN

Gallium nitride on silicon carbide (GaN on SiC) is a wide-bandgap process technology rather than a circuit function, which is why these parts also appear under Saturated PAs. The material's high breakdown field lets a device operate at 28 V or 50 V instead of the 5 V typical of silicon or GaAs, and its high electron mobility keeps that capability at microwave frequencies. The practical result is roughly an order of magnitude more RF power out of the same die area, with the SiC substrate carrying the resulting heat away.

Selection generally comes down to P_SAT, efficiency, gain, frequency coverage, and package or die format. Unmatched discrete HEMTs give the designer full control of the matching network and the widest usable bandwidth; pre-matched and dual-path devices trade some of that flexibility for a faster design cycle at a target band. Bare die (the “D” suffix) suit hybrid microwave assemblies and custom modules where a plastic package would limit thermal or frequency performance.

Typical applications include pulsed and CW radar, electronic warfare and jamming, 5G and macro basestation transmit chains, satellite communications, ISM industrial heating, and test & measurement — anywhere output power per watt of DC and per square millimetre of die is the binding constraint.

The table below lists the active GaN portfolio sorted by part number, with frequency range, gain, P_SAT, PAE, supply current, and package. Click any part number for its detail page, including the data sheet, S-parameters and reference designs where available. For the complete roadmap — including parts in design and development that are not yet released — see the GaN Selection Guide or send us your GaN PA requirements.