Data Sheet
Modelithics Nonlinear Model
GaN HEMT Power Transistor, 150 Watt P3dB
DC - 3.2 GHz
The GRF0135 is a 150W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.2GHz on a 50V supply rail. The wide bandwidth of the GRF0135 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations. The device is housed in an industry-standard 6x3 mm surface mount DFN-14 package. Lead-free and RoHS compliant.
Guerrilla RF has partnered with Modelithics to offer nonlinear models for select GaN on SiC HEMT devices. Click on the 'Transistors' category within the Modelithics' site to access these models.