Products
GaN RF Transistors
About GaN RF transistors: unmatched discrete GaN on SiC HEMTs — the bare transistor, with the matching network left to the designer. Read more »Read less «
An unmatched discrete device is the GaN HEMT on its own: no input or output matching network is built in, so the impedance presented at the leads is the transistor's own. That puts the matching design in the customer's hands, which is the point — the same part can be tuned for any band inside its usable range, traded between bandwidth, efficiency, and linearity as the application demands.
The trade against a pre-matched PA is engineering effort. An unmatched HEMT needs a load-pull-informed matching network, careful bias and stability work, and thermal design around the package or die. In exchange it delivers the widest frequency coverage and the freedom to hit a target no pre-matched part addresses.
Both packaged parts and bare die (the “D” suffix) appear here. Die suit hybrid microwave assemblies and custom modules where a plastic package would cap thermal or frequency performance.
Note on terminology: these are sometimes listed as saturated PAs and sometimes as transistors. They remain in the Saturated PAs table as well, and in the full Guerrilla GaN portfolio.
| Product | Min Freq (GHz) | Max Freq (GHz) | Gain (dB) | OP1dB (dBm) | Psat (dBm) | PAE (%) | Reference Conditions | Vdd Range (V) | Iccq (mA) | Features | Package (mm) | Description | Parametric Charts |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GRF0005 | 0 | 12 | 18.9 | 38.7 | 48.7 | 40V/20mA/3GHz |
28-40 | 20 | High power; wide bandwidth |
3.0 QFN-16 | GaN HEMT Power Transistor |
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| GRF0010 | 0 | 8 | 14.5 | 42.0 | 62 | 50V/15mA/3500MHz |
28-50 | 15 | Very high power; wide bandwidth |
3.0 QFN-16 | Unmatched Discrete GaN-on-SiC HEMT, 15W PSAT at 50V |
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| GRF0010D | 0 | 8 | 17.3 | 42 | 61.3 | 50V/15mA/DC to 8 GHz |
28-50 | 15 | High power; wide bandwidth |
50V, DC – 8GHz, 10W GaN HEMT, Bare Die |
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| GRF0012 | 0 | 12 | 12.2 | 41.6 | 59.1 | 40V/20mA/3GHz |
28-40 | 20 | High power; wide bandwidth |
3.0 QFN-16 | GaN HEMT Power Transistor |
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| GRF0020 | 0 | 7 | 15.5 | 45.0 | 48 | 50V/30mA/3000MHz |
28-50 | 30 | Very high power; wide bandwidth |
3.0 QFN-16 | Unmatched Discrete GaN-on-SiC HEMT, 30W PSAT at 50V |
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| GRF0020D | 0 | 7 | 18.7 | 45.4 | 63.8 | 50V/30mA/3000MHz |
28-50 | 30 | Very high power; wide bandwidth |
3.0 QFN-16 | GaN HEMT BARE DIE, 30 Watt P3dB |
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| GRF0030 | 0 | 6 | 15.5 | 47.0 | 54.5 | 50V/50mA/3000MHz |
28-50 | 50 | Very high power; wide bandwidth |
3.0 QFN-16 | Unmatched Discrete GaN-on-SiC HEMT, 50W PSAT at 50V |
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| GRF0030D | 0 | 6 | 15.5 | 47.0 | 56 | 50V/50mA/3000MHz |
28-50 | 50 | Very high power; wide bandwidth |
3.0 QFN-16 | GaN HEMT BARE DIE, 50 Watt P3dB |
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| GRF0065 | 0 | 3.7 | 10 | 48.7 | 50 | 50V/78mA/3600MHz |
28-50 | 78 | Very high power; wide bandwidth |
6X3 DFN-14 | GaN HEMT Power Transistor, 80 Watt P3dB |
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| GRF0090 | 0 | 3.7 | 10 | 49.7 | 56.3 | 50V/109mA/3.5GHz |
28-50 | 109 | Very high power; wide bandwidth |
6x3 DFN14 | GaN HEMT Power Transistor, 110 Watt P3dB |
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| GRF0135 | 0 | 3.2 | 13.8 | 52.0 | 57 | 50V/150mA/3.2GHz |
28-50 | 150 | Very high power; wide bandwidth |
6x3 DFN-14 | GaN HEMT Power Transistor, 150 Watt P3dB |
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| GRF0150* | 0 | 3.2 | 10.7 | 51.8 | 53 | 50V/150mA/3.2GHz |
28-50 | 150 | Very high power; wide bandwidth |
NI-360 Air Cavity Ceramic | GaN HEMT Power Transistor, 150 Watt P3dB |
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| GRF5923* | 0 | 6 | 13.5 | 47 | 50 | 50V/50mA/3 to 4 GHz |
50 | 50 | Very high power; wide bandwidth |
4.0 QFN-24 | Dual 30 Watt GaN Power Transistor |
* = Product is in Pre-Production. Contact [email protected] for minimum order quantity.