50V, DC – 8GHz, 10W GaN HEMT, Bare Die
The GRF0010 is a 10 W linear, 15 W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 8 GHz on a 50 V supply rail. The wide bandwidth makes the GRF0010 suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations.
Product Categories
Markets
Applications
- Cellular Infrastructure
- Radar
- Communications
- Test Instrumentation
Features
- Operating Frequency Range: DC to 8 GHz
- Maximum Output Power: 15W (P3dB)
- Operating Drain Voltage: 28 and 50 Volt
- Suitable for CW, Pulsed, Linear applications
- 100% KGD DC Production Tested
Reference: 50V/15mA/DC to 8 GHz
- Single-Tone Pulsed CW: 10% Duty Cycle, 100 μs Pulse Width
- Optimum Peak Power at 2.5 dB Compression
- Optimum Efficiency at 2.5 dB Compression