GaN HEMT Power Transistor
12 Watt P3dB
DC to 12 GHz
The GRF0012 is a 12 W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 12 GHz on a 28 V supply rail. The wide bandwidth makes the GRF0012 suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations. The device is housed in an industry-standard 3 x 3 mm surface mount QFN-16 package. Lead free and RoHS compliant.
Please consult with the GRF applications engineering team for custom tuning/evaluation board data.
Product Categories
Markets
Applications
- Cellular Infrastructure
- Radar
- Communications
- Test Instrumentation
Features
- Operating Frequency Range: DC to 12 GHz
- Maximum Output Power: 12 Watt (P3dB)
- Operating Drain Voltage: 28V and 40 Volt
- Suitable for Pulsed, Linear Applications
- 100% DC & RF Production Tested
- Compact 3 x 3 mm QFN-16 Package
Reference: 28V/20mA/3GHz
- Saturated Gain: 16.5 dB
- Saturated Drain Efficiency: 60%
- Saturated Output Power: 40.8 dBm