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GRF0090

GaN HEMT Power Transistor, 110 Watt P3dB

DC - 3.7 GHz

Distributors

Data Sheet

GaN HEMT Power Transistor, 110 Watt P3dB

DC - 3.7 GHz

The GRF0090 is a 110W (P2.5dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GRF0090 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations. The device is housed in an industry-standard 6x3 mm surface mount DFN-14 package. Lead-free and RoHS compliant.