GaN HEMT Power Transistor, 110 Watt P3dB
DC - 3.7 GHz
The GRF0090 is a 110W (P2.5dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GRF0090 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations. The device is housed in an industry-standard 6x3 mm surface mount DFN-14 package. Lead-free and RoHS compliant.
Product Categories
Markets
Applications
- Cellular Infrastructure
- Radar
- Communications
- Test Instrumentation
Features
- Operating Frequency Range: DC to 3.7GHz
- Maximum Output Power: 110 Watt (P3dB)
- Operating Drain Voltage: 28 and 50 Volt
- Suitable for Pulsed, Linear Applications
- 100% DC & RF Production Tested
- Compact 6 x 3 mm DFN-14 Package
Reference: 50V/109mA/3.5GHz
- Saturated Gain: 10 dB
- Saturated Drain Efficiency: 56.3%
- Saturated Output Power: 49.7 dBm