GRF5923

Dual 30 Watt GaN Power Transistor

Near DC - 6 GHz

Pre-Production

Distributors

Data Sheet

Dual 30 Watt GaN Power Transistor

Near DC - 6 GHz

The GRF5923 is a broadband GaN-on-SiC high electron mobility transistor (HEMT) which provides up to 30W of saturated power per side for a variety of commercial and military applications. By using specific matching topologies, the device can be tuned to operate within a multitude of bands from near DC to 6 GHz.

The GRF5923 is part of a new family of single and dual-path GaN power transistors which deliver between 6W and 30W of saturated output power. As a dual 30W device, the GRF5923 is well suited as a driver for base station transmitters, or as a final stage PA for various military communications systems.

Please consult with the GRF applications engineering team for custom tuning/evaluation board data.

Frequently Asked Questions

What is the frequency range of GRF5923?

The GRF5923 operates from 0-6 GHz.

What package does GRF5923 come in?

The GRF5923 is supplied in a 4.0 QFN-24 package.

What is the typical performance of GRF5923?

Typical performance for the GRF5923 is 13.5 dB of gain and 47 dBm saturated output power. See the data sheet for full conditions, limits, and over-temperature behavior.

What applications is GRF5923 typically used in?

The GRF5923 is targeted at 5G Infrastructure, Military, and Navigation applications.

Where can I download the data sheet for GRF5923?

The data sheet for GRF5923 is available as a PDF at https://www.guerrilla-rf.com/includes/prodFiles/5923/GRF5923DS.pdf. You can also view it embedded in the Data Sheet tab on this page.

Are SPICE models or S-parameter files available for GRF5923?

S-parameter (.s2p) files for GRF5923 are available on the product detail page when published. For SPICE models, simulation files, or custom tuning data, contact the Guerrilla RF applications engineering team at [email protected].

GRF0005

GaN HEMT Power Transistor 5 Watt P3dB DC to 12 GHz

0-12 GHz · 18.9 dB Gain

GRF0010

Unmatched Discrete GaN-on-SiC HEMT in 3x3 QFN16 package, 15W P SAT at 50V or 8W P SAT at 28V DC - 8 GHz

0-8 GHz · 14.5 dB Gain

GRF0010D

50V, DC – 8GHz, 10W GaN HEMT, Bare Die

0-8 GHz · 17.3 dB Gain

GRF0012

GaN HEMT Power Transistor 12 Watt P3dB DC to 12 GHz

0-12 GHz · 12.2 dB Gain

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