Unmatched Discrete GaN-on-SiC HEMT in 3x3 QFN16 package, 15W PSAT at 50V or 8W PSAT at 28V
DC - 8 GHz
The GRF0010 is a 15W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 8.0GHz on a 50V supply rail. This device can also function on a 28V supply rail, delivering 8W of saturated power output. The wide bandwidth of the GRF0010 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations. The device is housed in an industry-standard 3x3 mm surface mount QFN-16 package. Lead-free and ROHS compliant.
Guerrilla RF has partnered with Modelithics to offer nonlinear models for select GaN on SiC HEMT devices. Click on the 'Transistors' category within the Modelithics' site to access these models.
Product Categories
Markets
Applications
- Cellular Infrastructure
- Radar
- Communications
- Test Instrumentation
Features
- Operating Frequency Range: DC to 8.0GHz
- Maximum Output Power: 15W (P3dB)
- Operating Drain Voltage: 28V and 50 Volt
- Suitable for Pulsed, Linear Applications
- 100% DC & RF Production Tested
- Compact 3 x 3 mm QFN-16 Package
Reference: 50V/15mA/3500MHz
- Saturated Gain: 14.5 dB
- Saturated Drain Efficiency: 62%
- Saturated Output Power: 42 dBm


