GaN HEMT Power Transistor, 80 Watt P3dB
DC - 3.7 GHz
The GRF0065 is an 80W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 3.7GHz on a 50V supply rail. The wide bandwidth of the GRF0065 makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support both linear and pulse operations. The device is housed in an industry-standard 6x3 mm surface mount DFN-14 plastic package. Lead-free and RoHS compliant.
Guerrilla RF has partnered with Modelithics to offer nonlinear models for select GaN on SiC HEMT devices. Click on the 'Transistors' category within the Modelithics' site to access these models.
Product Categories
Markets
Applications
- Cellular Infrastructure
- Radar
- Communications
- Test Instrumentation
Features
- Operating Frequency Range: DC to 3.7GHz
- Maximum Output Power: 80 Watt (P3dB)
- Operating Drain Voltage: 28 and 50 Volt
- Suitable for Pulsed, Linear applications
- 100% DC & RF Production Tested
- Compact 6 x 3 mm DFN-14 Package
Reference: 50V/78mA/3.6GHz
- Saturated Gain: 10 dB
- Saturated Drain Efficiency: 50%
- Saturated Output Power: 48.7 dBm

