GaN HEMT BARE DIE, 50 Watt P3dB
DC to 6 GHz
The GRF0030D is a 50W (P3dB) unmatched discrete GaN-on-SiC HEMT which operates from DC to 6.0GHz on a 50V supply rail. The wide bandwidth of the GRF0030D makes it suitable for a variety of applications including cellular infrastructure, radar, communications, and test instrumentation, and can support CW, linear and pulse operations.
Product Categories
Markets
Applications
- Cellular Infrastructure
- Radar
- Communications
- Test Instrumentation
Features
- Operating Frequency Range: DC to 6 GHz
- Operating Drain Voltage: 28 and 50 Volt
- Maximum Output Power: 50 Watt (P3dB)
- Suitable for CW, Pulsed, Linear applications
- 100% KGD DC Production Tested
Reference: 50V/50mA/3000MHz
- Power Gain: 16.5 dB
- Small Signal Gain: 15.5 dB
- Saturated Gain: 14 dB
- Saturated Drain Efficiency: 56%
- Saturated Output Power: 47 dBm
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