High Efficiency, High Output Power Amplifiers for the Final Stage of a Transmit Chain
| Product | Description | Min Freq (GHz) | Max Freq (GHz) | Parametric Charts | Reference Conditions | Gain (dB) | OP1dB (dBm) | Psat (dBm) | PAE (%) | Vdd Range (V) | Iccq (mA) | Features | Package (mm) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GRF0005 | GaN HEMT Power Transistor |
0 | 12 | 40V/20mA/9.3GHz |
12 | 37 | 50 | 40 | 20 | High power; wide bandwidth |
3.0 QFN-16 | ||
| GRF0010 | Unmatched Discrete GaN-on-SiC HEMT, 15W PSAT at 50V |
0 | 8 | 50V/15mA/3500MHz |
14.5 | 42.0 | 62 | 28-50 | 15 | Very high power; wide bandwidth |
3.0 QFN-16 | ||
| GRF0010D | 50V, DC – 8GHz, 10W GaN HEMT, Bare Die |
0 | 8 | 50V/15mA/DC to 8 GHz |
17.3 | 42 | 61.3 | 28-50 | 15 | High power; wide bandwidth |
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| GRF0012 | GaN HEMT Power Transistor |
0 | 12 | 28V/20mA/3GHz |
16.5 | 40.8 | 60 | 28-40 | 20 | High power; wide bandwidth |
3.0 QFN-16 | ||
| GRF0020 | Unmatched Discrete GaN-on-SiC HEMT, 30W PSAT at 50V |
0 | 7 | 50V/30mA/3000MHz |
15.5 | 45.0 | 48 | 28-50 | 30 | Very high power; wide bandwidth |
3.0 QFN-16 | ||
| GRF0020D | 50V, DC – 7GHz, 30W GaN HEMT, Bare Die |
0 | 7 | 50V/30mA/3000MHz |
18.7 | 45.4 | 63.8 | 28-50 | 30 | Very high power; wide bandwidth |
3.0 QFN-16 | ||
| GRF0030 | Unmatched Discrete GaN-on-SiC HEMT, 50W PSAT at 50V |
0 | 6 | 50V/50mA/3000MHz |
15.5 | 47.0 | 54.5 | 28-50 | 50 | Very high power; wide bandwidth |
3.0 QFN-16 | ||
| GRF0030D | 50V, DC – 6.0GHz, 50W GaN HEMT, Bare Die |
0 | 6 | 50V/50mA/3000MHz |
15.5 | 47.0 | 56 | 28-50 | 50 | Very high power; wide bandwidth |
3.0 QFN-16 | ||
| GRF0065 | Unmatched Discrete GaN-on-SiC HEMT, 80W PSAT at 50V |
0 | 3.7 | 50V/78mA/3600MHz |
14.7 | 49.1 | 54 | 28-50 | 78 | Very high power; wide bandwidth |
6X3 DFN-14 | ||
| GRF0090 | Unmatched Discrete GaN-on-SiC HEMT, 110W PSAT at 50V |
0 | 3.7 | 50V/109mA/3500MHz |
12.9 | 49.7 | 56.3 | 28-50 | 109 | Very high power; wide bandwidth |
6x3 DFN14 | ||
| GRF0135 | Unmatched Discrete GaN-on-SiC HEMT, 150W PSAT at 50V |
0 | 3.2 | 50V/150mA/3200MHz |
13.5 | 52.0 | 57 | 28-50 | 150 | Very high power; wide bandwidth |
6x3 DFN-14 | ||
| GRF5217 | High Efficiency Power Amplifier |
1.5 | 2.2 | 5.0V/36mA/1880MHz |
31 | 30.4 | 30 | 4-5 | 36 | High efficiency; high gain |
3.0 QFN-16 | ||
| GRF5225* | High Efficiency Power Amplifier |
2.3 | 2.7 | 4.0V/39mA/2.5GHz |
27.8 | 29 | 4-5 | 39 | High efficiency; high gain |
3.0 QFN-16 | |||
| GRF5504 | High Efficiency 3.5 Watt Power Amplifier |
0.1 | 0.55 | 5.0V/125mA/460MHz |
41.0 | 34.3 | 35.3 | 61 | 3.5-5.0 | 125 | High efficiency, high power |
3.0 QFN-16 | |
| GRF5509 | High Efficiency, 4-Watt PA |
0.689 | 1.09 | 5.0V/125mA/915MHz |
33.4 | 35.5 | 36.4 | 55 | 5.0 | 125 | High efficiency, high power |
3.0 QFN-16 | |
| GRF5529 | High Efficiency Power Amplifier |
2.9 | 3 | 5.0V/110mA/2950MHz |
29.5 | 34.0 | 57 | 5.0 | 110 | High efficiency; high gain |
3.0 QFN-16 | ||
| GRF5847 | 35 dBm Linear PA Module |
4.4 | 5.2 | 5V/260mA/4.7GHz |
40 | 35.5 | 52 | 3-5 | 260 | High efficiency, high power, high gain |
2.5 x 3.0 mm LAMM-12 | ||
| GRF5857 | 35 dBm Linear PA Module |
5.2 | 6 | 5V/310mA/5.6GHz |
37 | 35.7 | 52 | 3-5 | 310 | High efficiency, high power, high gain |
2.5 x 3.0 mm LAMM-12 | ||
| GRF5923* | Dual 30 Watt GaN Power Transistor |
0 | 6 | 50V/50mA/3 to 4 GHz |
13.5 | 47 | 50 | 50 | 50 | Very high power; wide bandwidth |
4.0 QFN-24 |
* = Product is in Pre-Production. Contact [email protected] for minimum order quantity.