GRF0805

GaN HEMT Doherty Transistors, 50W P3dB

3.3 - 3.8 GHz

Pre-Production

Distributors

Data Sheet

GaN HEMT Doherty Transistors, 50W P3dB

3.3 - 3.8 GHz

The GRF0805 is a 50 W (P3dB) dual path, single stage discrete GaN-on-SiC HEMT device which operates from 3.3 to 3.8 GHz on a 50 V supply. The wide bandwidth makes the GRF0805 suitable for MIMO power amplifier in Doherty configuration. The device is housed in an industry-standard 7 x 6.5 mm surface mount DFN-6 plastic package. Applications include cellular infrastructure, radar, communications, and test instrumentation. The device supports both linear and pulse operations. Lead free and RoHS compliant.

Please consult with the GRF applications engineering team for custom tuning/evaluation board data.

Frequently Asked Questions

What is the frequency range of GRF0805?

The GRF0805 operates from 3.3-3.8 GHz.

What package does GRF0805 come in?

The GRF0805 is supplied in a 7x6.5 DFN6 package.

What is the typical performance of GRF0805?

Typical performance for the GRF0805 is 12 dB of gain and 47 dBm saturated output power. See the data sheet for full conditions, limits, and over-temperature behavior.

What applications is GRF0805 typically used in?

The GRF0805 is targeted at 5G Infrastructure, Military, and Navigation applications.

Where can I download the data sheet for GRF0805?

The data sheet for GRF0805 is available as a PDF at https://www.guerrilla-rf.com/includes/prodFiles/0805/GRF0805DS.pdf. You can also view it embedded in the Data Sheet tab on this page.

Are SPICE models or S-parameter files available for GRF0805?

S-parameter (.s2p) files for GRF0805 are available on the product detail page when published. For SPICE models, simulation files, or custom tuning data, contact the Guerrilla RF applications engineering team at [email protected].

GRF0005

GaN HEMT Power Transistor 5 Watt P3dB DC to 12 GHz

0-12 GHz · 18.9 dB Gain

GRF0010

Unmatched Discrete GaN-on-SiC HEMT in 3x3 QFN16 package, 15W P SAT at 50V or 8W P SAT at 28V DC - 8 GHz

0-8 GHz · 14.5 dB Gain

GRF0010D

50V, DC – 8GHz, 10W GaN HEMT, Bare Die

0-8 GHz · 17.3 dB Gain

GRF0012

GaN HEMT Power Transistor 12 Watt P3dB DC to 12 GHz

0-12 GHz · 12.2 dB Gain

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