GaN HEMT Doherty Transistors, 50W P3dB
3.3 - 3.8 GHz
The GRF0805 is a 50 W (P3dB) dual path, single stage discrete GaN-on-SiC HEMT device which operates from 3.3 to 3.8 GHz on a 50 V supply. The wide bandwidth makes the GRF0805 suitable for MIMO power amplifier in Doherty configuration. The device is housed in an industry-standard 7 x 6.5 mm surface mount DFN-6 plastic package. Applications include cellular infrastructure, radar, communications, and test instrumentation. The device supports both linear and pulse operations. Lead free and RoHS compliant.
Please consult with the GRF applications engineering team for custom tuning/evaluation board data.
Product Categories
Markets
Applications
- Cellular Infrastructure
- Radar
- Communications
- Test Instrumentation
Features
- Operating Frequency Range: 3.3 to 3.8 GHz
- Operating Drain Voltage: 50 Volt
- Maximum Output Power: 50 Watt (P3dB)
- Internally Prematched Input for Doherty and DPD Operation
- 100% DC & RF Production Tested
- Compact 7 x 6.5 mm DFN-6 Package
Reference: 50V/38mA/3.6GHz
- Saturated Gain: 12 dB
- Saturated Output: 47 dBm