GaN HEMT Prematched Transistor, 150 Watt P3dB
2.7 - 3.1 GHz
The GRF0315 is a 150 W (P3dB) pre-matched discrete GaN-on-SiC HEMT device which operates from 2.7 to 3.1 GHz on a 50 V supply rail. The wide bandwidth makes the GRF0315 suitable for radar, avionics, satellite communications, and pulsed operations. The device is housed in an industry-standard 7 x 6.5 mm surface mount DFN-6 plastic package. Lead free and RoHS compliant.
Please consult with the GRF applications engineering team for custom tuning/evaluation board data.
Product Categories
Markets
Applications
- Cellular Infrastructure
- Radar
- Communications
- Test Instrumentation
Features
- Operating Frequency Range: 2.7 to 3.1G Hz
- Maximum Output Power: 150 Watt (P3dB)
- Operating Drain Voltage: 28 and 50 Volt
- Internally Prematched Input
- 100% DC & RF Production Tested
- Compact 7 x 6.5 mm DFN-6 Package
Reference: 50V/100mA/3GHz
- Saturated Gain: 13 dB
- Saturated Drain Efficiency: 62%
- Saturated Output Power: 52.5 dBm