GRF0315

GaN HEMT Prematched Transistor, 150 Watt P3dB

2.7 - 3.1 GHz

Pre-Production

Distributors

Data Sheet

GaN HEMT Prematched Transistor, 150 Watt P3dB

2.7 - 3.1 GHz

The GRF0315 is a 150 W (P3dB) pre-matched discrete GaN-on-SiC HEMT device which operates from 2.7 to 3.1 GHz on a 50 V supply rail. The wide bandwidth makes the GRF0315 suitable for radar, avionics, satellite communications, and pulsed operations. The device is housed in an industry-standard 7 x 6.5 mm surface mount DFN-6 plastic package. Lead free and RoHS compliant.

Please consult with the GRF applications engineering team for custom tuning/evaluation board data.

Frequently Asked Questions

What is the frequency range of GRF0315?

The GRF0315 operates from 2.7-3.1 GHz.

What package does GRF0315 come in?

The GRF0315 is supplied in a 7x6.5 DFN-6 package.

What is the typical performance of GRF0315?

Typical performance for the GRF0315 is 13 dB of gain and 52.5 dBm saturated output power. See the data sheet for full conditions, limits, and over-temperature behavior.

What applications is GRF0315 typically used in?

The GRF0315 is targeted at 5G Infrastructure, Military, and Navigation applications.

Where can I download the data sheet for GRF0315?

The data sheet for GRF0315 is available as a PDF at https://www.guerrilla-rf.com/includes/prodFiles/0315/GRF0315DS.pdf. You can also view it embedded in the Data Sheet tab on this page.

Are SPICE models or S-parameter files available for GRF0315?

S-parameter (.s2p) files for GRF0315 are available on the product detail page when published. For SPICE models, simulation files, or custom tuning data, contact the Guerrilla RF applications engineering team at [email protected].

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