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GRF0315

GaN HEMT Prematched Transistor, 150 Watt P3dB

2.7 - 3.1 GHz

Pre-Production

Distributors

Data Sheet

GaN HEMT Prematched Transistor, 150 Watt P3dB

2.7 - 3.1 GHz

The GRF0315 is a 150 W (P3dB) pre-matched discrete GaN-on-SiC HEMT device which operates from 2.7 to 3.1 GHz on a 50 V supply rail. The wide bandwidth makes the GRF0315 suitable for radar, avionics, satellite communications, and pulsed operations. The device is housed in an industry-standard 7 x 6.5 mm surface mount DFN-6 plastic package. Lead free and RoHS compliant.

Please consult with the GRF applications engineering team for custom tuning/evaluation board data.