GaN HEMT Dual Path, 55 Watt P3dB
2.4 - 2.5 GHz
The GRF0505 is a 55 Watt (P3dB) dual path, single stage discrete GaN-on-SiC HEMT device which operates from 2.4 to 2.5 GHz on a 50 Volt supply rail. Dual path configuration flexibility makes the GRF0505 suitable for both single path (27W, P3dB) and dual path (55W, P3dB) configurations. The device is housed in an industry standard 7 x 6.5 mm surface mount DFN-6 plastic package. Applications include ISM, cellular infrastructure, communications, test instrumentation, and can support both linear and pulse operations. Lead free and RoHS compliant.
Please consult with the GRF applications engineering team for custom tuning/evaluation board data.
Product Categories
Markets
Applications
- Cellular Infrastructure
- ISM
- Communications
- Test Instrumentation
Features
- Operating Frequency Range: 2.4 to 2.5 GHz
- Operating Drain Voltage: 50 Volt
- Maximum Output Power: 55 Watt (P3dB)
- Internally Pre-matched Input for High Gain and High Efficiency Operation
- 100% DC & RF Production Tested
- Compact 7 x 6.5 mm DFN-6 Package
Reference: 50V/45mA/2.45GHz
- Saturated Gain: 15 dB
- Saturated Drain Efficiency: 65%
- Saturated Output Power: 48 dBm