LNA with Selectable Gain/Bypass
Tuning Range: 0.5 to 6 GHz
The GRF2176 is a two-stage GaAs pHEMT low noise amplifier targeting high-performance wireless infrastructure applications. The second stage can be bypassed with an independent control pin, thus allowing the device to support high and low gain modes of 32.9 and 16.3 dB, respectively.
For optimal efficiency and linearity, the amplifier was designed to operate with a single 5 V supply voltage while using only 64 mA of quiescent current. Supply voltages ranging from 2.7 to 6 V are also supported. Similarly, IDDQ can be increased beyond the native biasing point for enhanced linearity performance.
Product Categories
Applications
- 5G Sub-6 GHz Massive MIMO Base Stations
- TDD Small Cells and Cellular Repeaters
- High-Performance RF Infrastructure
Features
- Selectable High Gain and Low Gain Modes
- Excellent Linearity Performance Over Wide Bandwidths
- 2.7 to 6 V Supply Voltage
- Flexible Biasing Provides Latitude for Linearity Optimization
- 64 mA Native Mode Quiescent Current Consumption
- 50 Ω Single-Ended Input and Output Impedances
- RoHS Compliant
Reference: High Gain Mode / 5 V / 64 mA / 3.75 GHz
- Gain: 32.9 dB
- NF: 0.65 dB (Eval Board)
- OP1dB: 19.6 dBm
- OIP3: 33.6 dBm
Reference: Low Gain Mode / 5 V / 28 mA / 3.75 GHz
- Gain: 16.3 dB
- NF: 0.68 dB (Eval Board)
- OP1dB: 15.1 dBm
- OIP3: 28.8 dBm
NOTE: Charts represent a compilation of datasets that may span more than one tuning configuration, and apparent discontinuities in the plots may result. Please note that alternative tunes will likely resolve any such irregularities in the plots. Contact [email protected] for further guidance.